Semiconductor structure implementing low-k dielectric materials and supporting stubs

ABSTRACT

A semiconductor device is provided. The semiconductor device includes a substrate having transistor devices and a plurality of copper interconnect metallization lines and conductive vias. The plurality of copper interconnect metallization lines and conductive vias are defined in each of a plurality of interconnect levels of the semiconductor device such that the plurality of copper interconnect metallization lines and conductive vias are isolated from each other by an air dielectric. The semiconductor device further includes a plurality of supporting stubs each of which is configured to form a supporting column that extends through the plurality of interconnect levels of the semiconductor device.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor devicefabrication technology and techniques for improving the performance ofsemiconductor devices. Specifically, the present invention relates toimplementing sacrificial materials to enhance the performance ofsemiconductor devices.

2. Description of the Related Art

As is well known, the semiconductor industry is moving towardimplementing larger substrates having higher density with devices havingsmaller features. To achieve this task, millions of transistors areconnected through multiple layers of interconnect metallization lines,insulating dielectric layers, and conductive via structures and arefabricated on a wafer substrate. Originally, metallization lines andvias were predominantly formed from aluminum, as it is relativelyinexpensive, easy to etch, and has relatively low resistivity, whileinsulators were made predominantly from silicon dioxide. However, due tothe decrease in the size of the device features, vias and contact holesas well as the distance between the metallization lines in conjunctionwith system-on-chip evolution, there is an increased demand to improvesemiconductor device performance through changing the materialsimplemented in semiconductor fabrication. So far, this has been atwo-fold task.

First, rather than aluminum, copper interconnect lines, vias, andcontact holes are being implemented. Replacing of aluminum with copperhas been favorable, as the latter has lower resistivity and betterconductivity and electromigration properties than the former. However,replacing aluminum with copper has been problematic, as it mandates afundamental change in the metal interconnect formation. Specifically,while aluminum interconnects are formed by etching out unprotectedportions of the thin aluminum film overlaid on the surface of thesubstrate, copper interconnects are formed through depositing copperinto via holes and trenches that are etched into dielectric layers. As aresult, in a semiconductor device having copper interconnects, aplanarization operation must be performed on the substrate surface so asto remove overburden copper from non-trench, via or contact plug areasof the dielectric.

Second, instead of silicon dioxide, dielectric materials with lowdielectric permittivity, or so-called low-K dielectric materials, arebeing used as insulators. Low-K dielectric materials are preferredbecause first, they reduce interconnect-to-interconnect capacitance, asthe coupling capacitance between two metallization lines placed in closeproximity of each other is directly proportional to the dielectricconstant of the insulating dielectric material used. Second, low-Kdielectric materials reduce cross-talk noise, since the lower is thedielectric constant of a dielectric, the lower is the possibility ofcross-metallization line signal interference. By way of example, whilethe predominantly used dielectric, silicon dioxide, has a dielectricconstant of about 4.0, air has the lowest dielectric constant of 1.0,and other low-K dielectric materials ranging from about 1.5 and about3.5. As air has been recognized to have the lowest dielectric constant,there has been a trend in the semiconductor fabrication technology tomanufacture dielectric materials with dielectric constants close to thatof air.

So far, such attempts have resulted in producing highly porousdielectric materials. However, the poor mechanical strength of suchporous dielectric materials as well as the current state of thesemiconductor fabrication technology hinder their implementation in thesemiconductor fabrication process. Particularly, the poor mechanicalstrength of low-K dielectric materials is problematic during thechemical mechanical planarization (CMP) operation performed on coppermetallization lines. As is well known, in a CMP operation, the substratesurface is applied onto a moving polishing pad with force, thus removingthe overburden metal from over the substrate surface. However,performing a CMP operation on a semiconductor device having porous low-Kdielectric material is complicated as the application of the substratesurface onto the polishing pad may cause regions of the semiconductorstructure to collapse or crack, thus hindering performance or requiringthat the fabricated semiconductor wafer be discarded. As can beappreciated, when these problems are introduced during semiconductorfabrication processes, the yield of good chips can dramaticallydecrease, in addition to reducing wafer throughput.

In view of the foregoing, a need exists for semiconductor structuresthat can be fabricated using conventional techniques that provide goodstructural support during CMP operations, while still producing deviceshaving low capacitive delays such as those implementing low-K dielectricmaterials.

SUMMARY OF THE INVENTION

Broadly speaking, the present invention fills these needs by enablingthe fabrication of semiconductor structures using standard dielectricmaterials that can withstand mechanical stresses and pressures common inchemical mechanical planarization. In one preferred embodiment, asacrificial material is used to fabricate each layer of copperinterconnects of a semiconductor structure which is subsequently etchedaway and replaced with an insulator having a low dielectric permittivity(low-K). In another implementation, a plurality of supporting stubs areformed within each sacrificial layer, thus defining continuoussupporting columns for when the sacrificial material is etched away. Itshould be appreciated that the present invention can be implemented innumerous ways, including as a process, an apparatus, a system, a device,or a method. Several inventive embodiments of the present invention aredescribed below.

In one embodiment, a semiconductor device is disclosed. Thesemiconductor device includes a substrate having transistor devices anda plurality of copper interconnect metallization lines and conductivevias. The plurality of copper interconnect metallization lines andconductive vias are defined in each of a plurality of interconnectlevels of the semiconductor device such that the plurality of copperinterconnect metallization lines and conductive vias are isolated fromeach other by an air dielectric. The semiconductor device furtherincludes a plurality of supporting stubs each of which is configured toform a supporting column that extends through the plurality ofinterconnect levels of the semiconductor device.

In another embodiment, a semiconductor device is disclosed. Thesemiconductor device includes a substrate having transistor devices anda plurality of copper interconnect metallization lines and conductivevias. The plurality of copper interconnect metallization lines andconductive vias are defined in each of a plurality of interconnectlevels of the semiconductor device such that the plurality of copperinterconnect metallization lines and conductive vias are isolated fromeach other by a porous dielectric material. The semiconductor devicefurther includes a plurality of supporting stubs each of which isconfigured to form a supporting column that extends through theplurality of interconnect levels of the semiconductor device.

In still a further embodiment, a method for making a semiconductordevice is disclosed. The method starts by forming transistor structureson a substrate. Thereafter, interconnect metallization structures areformed in a plurality of levels through depositing a sacrificial layer,performing a dual damascene process to etch trenches and vias, andfilling and planarizing the trenches and vias. Thereafter, thesacrificial layer is etched throughout the plurality of levels of theinterconnect metallization structures, thus leaving a voidedinterconnect metallization structure. The voided interconnectmetallization structure is then filled with low K dielectric material,thus defining a low K dielectric interconnect metallization structure.

In yet another embodiment, a method for making a semiconductor device isdisclosed. The method starts with forming transistor structures on asubstrate, which is followed by forming interconnect metallizationstructures in a plurality of levels. The interconnect metallizationstructures are formed through depositing a sacrificial layer, performinga dual damascene process to etch trenches, vias, and stubs, and fillingand planarizing the trenches, vias, and stubs. Subsequently, thesacrificial layer is etched away throughout the plurality of levels ofthe interconnect metallization structure leaving a voided interconnectmetallization structure and supporting stubs.

The advantages of the present invention are numerous. Most notably, eventhough the semiconductor structure of the present invention ultimatelyimplements air or low-K dielectric materials as a dielectric, thesemiconductor structure of the present invention withstands thestructural stresses and pressures that occur during CMP and otheroperations. In this manner, while inter-metal dielectric capacitance isminimized and faster integrated circuit devices are produced, theshortcomings associated with implementing air or low-K dielectricmaterials in semiconductor fabrication processes are substantiallyeliminated.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings, andlike reference numerals designate like structural elements.

FIG. 1A is a simplified, partial, exploded, cross-sectional view of asemiconductor structure having an interlevel dielectric (ILD) formedover a substrate that has a plurality of active devices, in accordancewith one embodiment of the present invention.

FIG. 1B is a simplified, partial, exploded, cross-sectional view of thesemiconductor structure of FIG. 1A further including a first sacrificiallayer having a plurality of fabricated metallization lines, vias, andstubs, in accordance with another embodiment of the present invention.

FIG. 1C is a simplified, partial, exploded, cross-sectional view of thesemiconductor structure of FIG. 1B having a plurality of fabricatedsacrificial layers, each including a plurality of stubs, in accordancewith yet another embodiment of the present invention.

FIG. 1D is a simplified, partial, exploded, cross-sectional view of apost-etched multi-layer semiconductor structure having air as adielectric material, in accordance with yet another embodiment of thepresent invention.

FIG. 1E is a simplified, partial, exploded, cross-sectional view of thepost-etched air-dielectric multi-layer semiconductor structure of FIG.1D further including a passivation-capping layer, in accordance with oneaspect of the present invention.

FIG. 1F-1 is a simplified, partial, exploded, cross-sectional view ofthe post-etched multi-layer semiconductor structure of FIG. 1D havingbeen filled with a porous low-K dielectric material, in accordance withanother aspect of the present invention.

FIG. 1F-2 a simplified, partial, exploded, cross-sectional view of thepost-etched low-K dielectric filled semiconductor structure of FIG. 1Fbeing covered with a passivation-capping layer, in accordance with yetanother embodiment of the present invention.

FIG. 2 is a flow chart diagram of the process operations performed tofabricate an air dielectric semiconductor structure having a pluralityof copper metallization lines and supporting stubs, in accordance withanother aspect of the present invention.

FIG. 3 is a generic flow chart method operations process to fabricate aporous low-K dielectric semiconductor structure having a plurality ofcopper metallization lines, in accordance with yet another embodiment ofthe present invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Embodiments for making semiconductor structures that optimizesemiconductor performance by minimizing inter-metal dielectriccapacitance are described. In one preferred embodiment, a sacrificialmaterial is used during the fabrication of each layer of copperinterconnects and then is etched out and replaced with an insulatorhaving a low dielectric constant. In another embodiment, a plurality ofstubs are formed in the sacrificial layer, thus creating nearlycontinuous supporting columns for when the sacrificial layer is etchedaway. In preferred implementations, the substantially continuoussupporting columns of stubs are configured to extend from thepassivation layer to a passivation-capping layer, thus forming asemiconductor structure having high structural integrity with reducedcapacitance related delay. In a preferred embodiment, the plurality ofstubs are constructed from copper. In another embodiment, thesacrificial layer is a dielectric and the low-K dielectric material is aporous dielectric material.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be understood, however, to one skilled in the art, that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

FIG. 1A is a cross-sectional view of a semiconductor structure 100having an inter-level dielectric (ILD) formed over a substrate 102 thathas a plurality of transistors, in accordance with one embodiment of thepresent invention. As shown, each of the fabricated transistors includesa plurality of source/drain diffusion regions 103 formed within thesubstrate 102. Each of the transistors further includes a conductorpolysilicon gate 120, each of which is separated from the substrate 102by a dielectric gate oxide 118. In one embodiment, source/drain regions103, which are also known as P-type or N-type regions, may be formedthrough a doping process that implements impurities such as boron orphosphorous. As shown, the source/drain regions 103 are separated by aplurality of shallow trench isolation regions 104 also formed within thesubstrate 102. As designed, the shallow trench isolation regions 104 aremade out of a non-conducting material (e.g., silicon dioxide, siliconnitride, etc.). Formed along each of the sidewalls of each of the gateoxides 118 and polysilicon gates 120 are a plurality of dielectricspacers 122.

Further shown is the interlevel dielectric (ILD) 106 as it is formedover the substrate 102. In preferred examples, the ILD 106 isconstructed from silicon oxide. However, it must be understood by one ofordinary skill in the art that the ILD 106 may be constructed from anyother suitable dielectric material so long as the material issubstantially robust and provides ample insulation. The Inter-LevelDielectric layers normally are abbreviated as ILD 1, ILD 2 etc.Inter-Metal Dielectric (IMD) or Pre-Metal Dielectric (PMD) for the firstpost-device dielectric layer, are also frequently used to describe theintegrated circuit architecture.

Defined within the ILD 106 are a plurality of contact holes 108configured to be filled with a conductive material (i.e., forming aplug), thus allowing substantially direct electrical access between themetallization lines and the transistors (i.e., active components). Inone implementation, the contact plugs are formed by depositing a layerof tungsten and then planarizing away the overburden tungsten from overthe top surface of the ILD 106.

Although in this embodiment the contact holes 108 are filled withtungsten, one of ordinary skill in the art should appreciate that thecontact holes 108 may be filled with any conductive material so long astheir function of providing direct layer to layer electrical accessbetween the metal interconnects and the active components can beachieved. Additionally, although in this example a CMIP operation isused to remove the overburden materials, one of ordinary skill in theart must appreciate that any other planarization or material removaloperation may be implemented.

Following the planarization operation, a passivation layer 116 is formedover the ILD 106 so as to protect active components from corrosion andchemical reactions during the subsequent fabrication operations. In oneexample, the passivation layer 116 is made out of silicon nitride (SiN).

FIG. 1B depicts the semiconductor structure 100 of FIG. 1A furtherincluding a first sacrificial layer 110 a having a plurality offabricated metallization lines 115, via holes 112, and stub holes 124 a,in accordance with one embodiment of the present invention. As shown,overlaying the passivation layer 116 is the first sacrificial layer 110a, which in one embodiment, may be formed through a Chemical VaporDeposition (CVD) method. The first sacrificial layer 110 a is preferablya silicon dioxide (SiO₂) deposited using any proper deposition process.In one embodiment, silicon dioxide may be deposited by decomposing atetraethylorthosilicate “TEOS” Si(OC₂H₅)₄ reactant using any suitabledeposition method. Suitable deposition methods may include a chemicalvapor deposition (CVD), a low pressure chemical vapor deposition(LPCVD), an atmospheric pressure chemical vapor deposition (APCVD), subatmospheric chemical vapor deposition (SACVD), a plasma enhancedchemical vapor deposition (PECVD), etc. Although in this embodiment thesacrificial layer is made out of silicon dioxide, in a differentexample, the sacrificial layer 110 a may be made out of any inert tocopper material that is mechanically firm to be implemented during thefabrication process.

Following the formation of the first sacrificial layer 110 a, a copperdual damascene process is performed to form interlayer metallizationlines and conductive vias within the first sacrificial layer 110 a. Inone implementation, first, the plurality of via holes 112 are formed.This task may be achieved by overlaying the first sacrificial layer 110a with a photoresist mask and subsequently etching and removing theunprotected portions of the first sacrificial layer 110 a down to thesurface of the passivation layer 116 and to the contact holes 108.

In preferred embodiments, in addition to the via holes 112, a pluralityof stub holes 124 a are formed within the first sacrificial layer 110 aimplementing almost the same processes as the via holes 112. That is, aplurality of stub-shaped patterns are masked over the surface of thefirst sacrificial layer 110 a, which are subsequently etched and removeddown to the surface of the passivation layer 116. Next, implementing thesame techniques, a plurality of trenches 114 are formed within the firstsacrificial layer 110 a such that each of the plurality of trenches 114substantially aligns with a masked via hole 112.

At this point, a layer of metal is deposited onto the surface of thefirst sacrificial layer 110 a and into the trenches 114, via holes 112,and stub holes 124 a. In one embodiment, the trenches 114 are filledwith copper through sputtering and electroplating processes, thusdefining a plurality of metallization lines 115 and conductive vias. Inone implementation, prior to metal deposition, a barrier layer (notshown in this Figure) may be deposited over the surface of the firstsacrificial layer 110 a and into the plurality of via holes 112 andtrenches 114. Exemplary metals that may be used to form a barrier layertypically include a tantalum material or a tantalum nitride material, ora combination of both. Thereafter, a copper seed layer (also not shownin this drawing) maybe deposited on the barrier layer in order to linethe inner walls and surfaces within the plurality of via holes 112 andtrenches 114. The seed layer is configured to establish a goodelectrical contact for subsequent copper electrodeposition process.

As fabricated, the function of each of the plurality of stubs 125 a isto support the multi-layer structure of the semiconductor structure 100.Thus, as opposed to the plurality of conductive vias 113 which areconfigured to provide electrical connection between differentinterconnect layers, the function of the stubs 125 a is to provide asemiconductor structure having high structural integrity. Accordingly,it should be understood that a semiconductor device may have any numberof stubs 125 distributed so as to achieve the best structural supportarrangement. Furthermore, although in this embodiment the stub holes 124a are filled with copper, in a different example, the stub holes 124 amay be filled with any non-sacrificial material or metal so long as thematerial used is sufficiently robust to support a subsequently formedpassivation-capping layer 118.

Following the formation of the metallization lines 115, conductive vias113, and stubs 125 a a CMP operation is performed on the copper layerthat overlies the surface of the first sacrificial layer 110 a so as toremove overburden copper from the surface of the sacrificial layer 110a.

Reference is now made to FIG. 1C, which depicts the semiconductorstructure 100 of FIG. 1B having a plurality of fabricated sacrificiallayers 110 b-110 g, each including a plurality of stubs 125 b-125 g, inaccordance with one embodiment of the present invention. In oneexemplary embodiment, the second, third, fourth, fifth, sixth, andseventh sacrificial layers 110 b-110 g and each of their respectivetrenches 114, metallization lines 115, via holes 112, conductive vias113, stub holes 124 b-124 g, and stubs 125 b-125 g are formed in thesame manner and from the same materials as the first sacrificial layer110 a and its respective trenches 114, metallization lines 115, viaholes 112, conductive vias 113, stub holes 124 a, and stubs 125 a.

As illustrated, the plurality of stubs 125 b-125 g are formed within thefirst through seventh sacrificial layers 110 b-110 g, respectively, suchthat each of the plurality of stubs 125 b-125 g is aligned with one ofthe plurality of stubs 125 a. That is, each of the plurality of stubs125 g, together with its respective group of aligned stubs formed withineach of the sacrificial layers 110 a-110 f, defines a substantiallycontiguous supporting column, as each extends from the surface of thepassivation layer 116 to the surface of the seventh sacrificial layer110 g. In this manner, the stubs 125 a-125 g provide adequate supportfor a subsequently formed passivation-capping layer 118.

FIG. 1D is a cross-sectional view of a post-etched multi-layersemiconductor structure 100′ having air as a dielectric material, inaccordance with one embodiment of the present invention. As illustrated,the sacrificial layers 110 a-110 g of semiconductor 100 depicted in FIG.1C have been etched. For example, the sacrificial layers 110 a-110 g maybe removed through a wet etch process in which a mixture of hydrofluoricacid (HF) and de-ionized water (i.e., diluted HF (DHF)) is applied tothe sacrificial layers 110 a-110 g thus removing the sacrificialmaterial surrounding the conductive vias 113, metallization lines 115,and stubs 125 a-125 g. In one implementation, the sacrificial materialmay be removed by first immersing the semiconductor structure 100 in atank containing a mixture of hydrofluoric acid and de-ionized water fora specific time. Thereafter, the mixture of hydrofluoric acid andde-ionized water is removed by rinsing the semiconductor structure 100,which is followed by performing a spin rinsing operation. In anotherembodiment, the immersion etching maybe enhanced by utilizing heatersand agitation devices (e.g., stirrers, ultrasonic, megasonic, etc.). Inan alternate embodiment, rather than immersing the semiconductorstructure 100, the etching operation may be performed through thespraying of the mixture of hydrofluoric acid and de-ionized water ontothe semiconductor structure 100, thus creating a voided interconnectmetallization structure. However, in another embodiment, an oxide plasmaetch approach may be used to etch out the sacrificial material.

Preferably, the concentration of the hydrofluoric acid in the mixture ofhydrofluoric acid and de-ionized water ranges between approximatelyabout 0.1% to 5.0%. However, one of ordinary skill in the art mustappreciate that the concentration of the hydrofluoric acid in themixture of hydrofluoric acid and de-ionized water may be any appropriateconcentration so long as the mixture has the capability to remove thesacrificial layers without effecting the metallization lines.Furthermore, although the mixture of hydrofluoric acid and de-ionizedwater has been used to perform the etching operation, it must beunderstood that any appropriate etchant having a suitable concentrationmay be used so long as the etchant is capable of removing thesacrificial materials.

It must be noted that the stubs 125 a-125 g, conductive vias 113, andthe metallization lines 115 are configured not to be effected by theetching operation. That is, the stubs 125 a-125 g, conductive vias 113,and the metallization lines 115 are constructed from materials that aresubstantially inert to the mixture of hydrofluoric acid and de-ionizedwater. Furthermore, the removal of the sacrificial materials does noteffect the electrical performance of the active components, as they areprotected by the passivation layer 116. Additionally, although in thisembodiment air has been used as an insulator, in a differentimplementation, any gas having a low-K dielectric constant (e.g.,nitrogen, etc.) or any inert gas (e.g., neon, argon, etc.) may be usedto substitute the sacrificial materials.

Reference is now made to FIG. 1E illustrating the post-etchedair-dielectric multi-layer semiconductor structure 100′ of FIG. 1Dfurther including the passivation-capping layer 118, in accordance withone embodiment of the present invention. As illustrated, in one example,the passivation-capping layer 118 may include a plurality of concavities116 b ₁ and 116 b ₂ substantially formed in the voids created by theremoval of the sacrificial layer 125 g.

As shown, the passivation-capping layer 118 substantially concludes thefabrication of the semiconductor structure 100′ and serves two purposes.Besides functioning as a sealing passivation layer, thus preventingcorrosion and chemical reaction within the semiconductor structure 100′,the passivation-capping layer 118 also functions as a cap for thesemiconductor structure 100′. As such, the plurality of substantiallycontiguous columns of stubs 125 a-125 g provide sufficient support forthe passivation-capping layer 118. In this manner, as fabricated, thepassivation-capping layer 118, the plurality of stubs 125 a-125 g, theplurality of metallization lines 115, the plurality of conductive vias113, and the substrate 102 create a semiconductor structure that hashigh structural integrity with reduced capacitive delay.

FIG. 1F-1 is a cross-sectional view of the post-etched multi-layersemiconductor structure 100′ of FIG. 1D having low-K dielectric layers,in accordance with one embodiment of the present invention. Asillustrated, the sacrificial layers 110 a-110 g have been substitutedwith dielectric layers 110 a′-110 g′ made out of a low-K dielectricmaterial 111. The low-K dielectric material 111 is configured to be ahighly porous dielectric material preferably having a dielectricconstant substantially close to that of air. As such, the low-Kdielectric material includes a plurality of air-filled pores 111′. Inone embodiment, the low-K dielectric material 111 may be Nanoglass™ fromAppliedSignal Electronic Materials of Los Gatos, Calif., which is asilicon dioxide material with air-filled pores having a diameter assmall as 10 nanometers. In a different embodiment, any porous low-Kdielectric material may be implemented (e.g., a spin-on polymer, a CVDdeposited organosilicate glass (OSG), a spin-on polymer and a CVDdeposited OSG together spin on polymer combined with gas phaseevaporation technique, spin on polymer combined with supercriticaldrying technique, porous silica aerogels, Dow Corning hydrogensilsesquioxan based porous XLK dielectric, silicon evaporation/oxidatingdeposition in argon/oxygen atmosphere, etc.). For porous materials, theeffective dielectric constant ranges between the dielectric constant ofair (i.e., 1) and the dielectric constant of the dense material DowCorning XLK (i.e., 2.2). Hence, in preferred embodiments, the dielectricconstant of the porous low-K dielectric material ranges fromapproximately about 1 to approximately about 4.

In one exemplary implementation, the post-etched semiconductor structure100′ is filled with the low-K dielectric material 111 through a spin onprocess or CVD process. Preferably, the low-K dielectric material 111that is in the form of a liquid is introduced into the post-etchedsemiconductor structure 100′ with pressure. In this manner, the low-Kdielectric material 111 penetrates through almost all the etched regionsof the semiconductor structure 100′ approximately down to the firstdielectric layer 110 a′. In doing so, the post-etched regions of thesemiconductor structure 100′ can be filled with low-K dielectricmaterial 111 such that substantially all the existing voids are filledwith the low-K material 111. However, it will be understood by one ofordinary skill in the art that depending on the required mechanicalstrength of the semiconductor structure 100″ and the low-K dielectricmaterial, the low-K dielectric material 111 may be introduced into thesemiconductor structure 100′ such that some void still remainssubsequent to the filling operation. For instance, in one aspect, thepost-etched semiconductor structure 100′ may be filled such thatsubstantially the upper dielectric layers are filled with the low-Kdielectric material 111 while the lower dielectric layers remain almostvacant.

Following the introduction of the low-K dielectric material 111, asillustrated in FIG. 1F-2, the post-etched low-K dielectric semiconductorstructure 100″ is covered with a passivation-capping layer 118′, inaccordance with one implementation of the present invention. As shown,the passivation-capping layer 118′ functions as a sealing passivationlayer as well as a lid. As depicted, the passivation-capping layer 118′,the first through seventh dielectric layers 110 a′-110 g′, and thesubstrate 102 form a semiconductor structure 100″ that has highstructural integrity with low capacitive delay.

Although in these embodiments the sacrificial layers 110 a-110 g havebeen made out of silicon dioxide, it will be known to those skilled inthe art that any inert to copper material that is mechanically firm tobe implemented during the fabrication process may be used to form thesacrificial layers. It should be noted that the function of thesacrificial layers is to provide good mechanical support during thefabrication of the multi-layer interconnect structures. This mechanicalsupport is needed so that the interconnect structures can withstand thestructural stresses and pressures that occur during CMP and otheroperations.

Reference is now made to FIG. 2, which depicts a flowchart diagram 200of the process operations performed to fabricate an air dielectricsemiconductor structure having a plurality of copper metallization linesand supporting stubs, in accordance to one embodiment of the presentinvention. The method begins at an operation 202 in which a substratehaving active regions is provided. Next, in operation 204, shallowtrench isolation regions are formed in the substrate followed byoperation 206 in which transistor structures are formed in the activeregions.

Once the transistors are defined, the method continues on to operation208 in which the ILD is formed over the substrate surface. Thereafter,in operation 210, tungsten contact plugs configured to provide directaccess between the metallization lines and the transistors are formedthrough the ILD. The formation of tungsten contact plugs requires thedeposition of tungsten onto the surface of the ILD as well as into thevias to form tungsten plugs. Accordingly, in the subsequent operation212, the tungsten overlying the ILD surface is planarized thus removingthe overburden tungsten. This operation is then followed by operation214 in which a passivation layer is formed over the ILD to protect theactive components of the substrate from contamination.

At this point, the method continues to operation 216 in which asacrificial layer is formed over the previously formed layer.Thereafter, in operation 216, via holes and trenches are formed in thesacrificial layer. Preferably, this is achieved through a via-first,trench-first or a buried-via dual damascene process. Following theformation of via holes and trenches, in operation 220, stub holes areformed through the sacrificial layer so as to support the multi-layersemiconductor structure. In this manner, the supporting stubs are formedwithin each sacrificial layer thus providing support for a subsequentlyformed passivation-capping layer. In some cases, the stub holes can beformed at the same time the via holes are formed.

Subsequent to the formation of the via holes, trenches, and stub holes,in operation 222, copper is applied onto the surface of the sacrificiallayer and into the via holes, trenches, and stub holes, thus filling thetrenches, via holes, and stub holes. As copper is deposited into the viaholes, trenches, and stub holes, overburden copper remains on thesurface of the sacrificial layer. Accordingly, in operation 224, theoverburden copper is planarized and the substrate surface is cleanedthus removing any contaminants remaining on the substrate surface.Preferably, the overburden copper is planarized through a chemicalmechanical planarization (CMP) operation. It is important to note thatthe interconnect structure is very stable during the CMP operation sincesacrificial material is still present.

Thereafter, the method continues on to operation 226 in which it isdetermined whether any additional metallization lines need to be formed.If it is determined that additional metallization lines are required,the method returns to operation 216 in which a sacrificial layer isformed over the previously formed layer. In contrast, if there is noneed to form additional metallization lines, the method continues on tooperation 228 in which the sacrificial layers not protected by thepassivation layer are etched and removed. The removal of the sacrificialmaterial is achieved by applying a mixture of HF and de-ionized water tothe multi-layer semiconductor structure. Finally, the method continueson to operation 230 in which a passivation-capping layer is formed overthe last copper metallization layer and concludes the fabricationprocess.

Another embodiment of the present invention can be understood from theflowchart 300 of FIG. 3 depicting a flowchart diagram 300 of the processoperations performed to fabricate a porous low-K dielectricsemiconductor structure having copper metallization lines, in accordanceto one embodiment of the present invention. This method begins byoperation 302 in which a substrate having active regions is provided.Next, in operation 304 shallow trench isolation regions are formed intothe substrate followed by operation 306 in which transistor structuresare formed in active regions. Subsequent to the formation of thetransistor structures, in operation 308, the ILD is formed over thesubstrate surface followed by forming of tungsten contact plugs throughthe ILD in operation 310. Thereafter, the overburden tungsten overlayingthe surface of the ILD is planarized. This is followed by operation 314in which a passivation layer is formed over the ILD so as to protect theactive components of the substrate.

After the forming of the passivation layer, in operation 316 asacrificial layer is formed over the previously formed layer which isfollowed by forming of via holes and trenches through the sacrificiallayer in operation 318. Thereafter, in operation 320, copper is appliedonto the surface of the sacrificial layer thus filling the trenches andvia holes. In operation 322, a planarization and cleaning operation issubsequently performed so as to remove overburden copper andcontaminants from over the substrate surface.

Proceeding to operation 324, a determination is made as to whether anyadditional metallization lines need to be formed. If a determination ismade that an additional metallization line is required, the method thencontinues on to operation 316. Alternatively, the method continues tooperation 326 in which sacrificial layers not protected by thepassivation layer are etched and removed. The removal of sacrificiallayers is achieved by applying a mixture of HF and de-ionized water orany other chemical suitable for dissolving the sacrificial layers to themulti-layer semiconductor structure. Subsequently, in operation 328, thesacrificial layers are replaced by porous low-K dielectric material.Lastly, in operation 330, a passivation-capping layer is formed over thelast copper metallization layer thus concluding the fabrication process.

Again, it should be noted that the interconnect structure will bemechanically stable during each of the CMP operations since densesacrificial material is still present. Once there is no need for furtherCMP operations, the sacrificial material is removed. Once removed, theinterconnect structure can be filled with low K dielectric materials orleft as air dielectric. The low K dielectric or air will thereforeprovide for faster integrated circuit devices.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications may be practiced within the scope of theappended claims. For example, embodiments described herein have beenprimarily directed toward fabrication of semiconductor structures havingcopper metallization lines; however, it should be understood that thefabrication processes of the present invention are well suited forfabricating semiconductor structures having any type of metallizationlines (e.g., aluminum, tungsten and other metals or alloys).Accordingly, the present embodiments are to be considered asillustrative and not restrictive, and the invention is not to be limitedto the details given herein, but may be modified within the scope andequivalents of the appended claims.

1-5. (canceled)
 6. A semiconductor device, comprising: a substratehaving transistor devices and a passivation layer disposed over adielectric layer that is defined over the transistor devices; aplurality of copper interconnect metallization lines and conductive viasdefined in each of a plurality of interconnect levels of thesemiconductor device, the plurality of copper interconnect metallizationlines and conductive vias being isolated from each other by a porousdielectric material; and a plurality of supporting stubs, each of theplurality of supporting stubs configured to form a supporting columnthat is disposed over a surface of the passivation layer and extendsthrough the plurality of interconnect levels of the semiconductordevice, the plurality of supporting stubs not being electricallyinterconnected to the plurality of copper interconnect metallizationlines and conductive vias so that the supporting column maintainsstructural contact with the passivation layer to avoid electricalcontact with the plurality of copper interconnect metallization linesand conductive vias, the plurality of supporting stubs further beingconfigured so as to not provide electrical connection between theplurality of interconnect levels of the semiconductor device. 7.(canceled)
 8. The semiconductor device as recited in claim 6, furthercomprising: a passivation-capping layer defined over a topmost layer ofthe copper interconnect metallization lines and conductive vias. 9-25.(canceled)
 26. The semiconductor device as recited in claim 6, whereinthe plurality of copper interconnect metallization lines and conductivevias define dual damascene structures.
 27. The semiconductor device asrecited in claim 6, wherein the plurality of supporting stubs furthersupport a passivation-capping layer. 28 (canceled)
 29. A semiconductordevice, comprising: a substrate having transistor devices; an intermetaldielectric layer (ILD) including conductive contacts defining a firstinterconnect level of a plurality of interconnect levels of thesemiconductor device; a passivation layer defined over the ILD layer; aplurality of copper interconnect metallization lines and conductive viasdefined in each remaining interconnect level of the plurality ofinterconnect levels of the semiconductor device defined over thepassivation layer, the plurality of copper interconnect metallizationlines and conductive vias being isolated from each other by only aporous dielectric material; and a plurality of supporting stubs, each ofthe plurality of supporting stubs configured to form a supporting columnthat extends through each remaining interconnect level of the pluralityof interconnect levels of the semiconductor device.
 30. Thesemiconductor device as recited in claim 29 wherein the plurality ofsupporting stubs is not electrically interconnected to the plurality ofcopper interconnect metallization lines and conductive vias. 31 and 32(canceled)
 33. The semiconductor device as recited in claim 29, whereinthe plurality of supporting stubs further support a passivation-cappinglayer. 34 (canceled)
 35. A semiconductor device, comprising: a substratehaving transistor devices; an intermetal dielectric layer (ILD)including conductive contacts defining a first interconnect level of aplurality of interconnect levels of the semiconductor device, theconductive contacts being isolated from each other by a non-porousdielectric; a passivation layer defined over the ILD layer; a pluralityof copper interconnect metallization lines and conductive vias definedin each remaining interconnect level of the plurality of interconnectlevels of the semiconductor device, the plurality of copper interconnectmetallization lines and conductive vias being isolated from each otherby one of only a porous dielectric material and a mixture of only aporous dielectric material and a gaseous dielectric; apassivation-capping layer defined over a topmost layer of the copperinterconnect metallization lines and conductive vias; and a plurality ofsupporting stubs, each of the plurality of supporting stubs configuredto form a supporting column that extends through each remaininginterconnect level of the plurality of interconnect levels of thesemiconductor device.